Its high level of electrical conductivity and low diffusion into adjacent layers make tungsten an important component in thin-film transistors. It has a higher melting point of all metals and is used for the processing material, so it is also suitable for applications with very high temperatures. It is also characterized by its extraordinarily low coefficient of thermal expansion and high dimensional stability.
Applications
Vacuum electrical components
Production of heating elements.
Production of electrical parts.
| Description | Value - Unit | Specification |
|---|---|---|
| Density g/cm3 | 18.1 | |
| Elastic Limit kg/cm2 | 5812.38 | |
| Maximum load to traction kg/cm2 | 9177.44 | |
| Elongation over 25mm % | 15 | |
| Brinell hardness | 270 |
| Description | Value - Unit | Specification |
|---|---|---|
| Thermal conductivity K/mK | 93 | |
| Electrical Conductivity >14% IACS | 177W |
| Element | Percentage % |
|---|---|
| Tungsten - W | 95.00 max |
| Nickel - Ni | 3.50 max |
| Iron - Faith | 1.50 max |
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